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![Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors | SpringerLink Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs00339-017-0898-1/MediaObjects/339_2017_898_Fig3_HTML.jpg)
Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors | SpringerLink
![Several lowest electron energy levels for a uniform InAs nanocrystal of... | Download Scientific Diagram Several lowest electron energy levels for a uniform InAs nanocrystal of... | Download Scientific Diagram](https://www.researchgate.net/profile/J-Climente/publication/230649728/figure/fig3/AS:300371911168005@1448625652568/Hole-energy-levels-for-a-uniform-InAs-nanocrystal-of-diameter-d-6-nm-vs-magnetic-field_Q320.jpg)
Several lowest electron energy levels for a uniform InAs nanocrystal of... | Download Scientific Diagram
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the three morphology of InAs NWs (a) the taperd InAs NWs, (b) uniform... | Download Scientific Diagram
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PDF) Wafer-Scale Production of Uniform InAs y P 1– y Nanowire Array on Silicon for Heterogeneous Integration | Parsian Mohseni - Academia.edu
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